单片集成谐振式升压转换器设计
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刘子恒,孟凡易,王晨菲,马凯学
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Monolithic integrated resonant boost converter design
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Zi-heng LIU,Fan-yi MENG,Chen-fei WANG,Kai-xue MA
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| 表 3 本研究所提出的设计与相关设计的指标对比 |
| Tab.3 Index comparison between proposed design and other related design |
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| 设计 | f/MHz | 拓扑 | VOUT/VIN | 工艺 | Pden/（W·mm−2） | A/mm2 | η/% | | 本研究 | 500.0 | 并联Class-E | 12.0 V/20.0 V | 130 nm SOI+GaN | 1.480 | 9.00 | 60 | | Burkhart等[5] | 75.0 | 并联Class-E | 12.0 V/30.0 V | PCB | 0.012 | − | 87 | | Liu等[15] | 300.0 | 并联Class-E | 12.0 V/18.0 V | IPD+GaN | 0.048 | 92.00 | 47 | | Pilsoon等[1] | 680.0 | 开关电感 | 12.0 V/20.0 V | GaN-on-SiC | 0.240 | 9.00 | 39 | | Mclaughln等[19] | 47.5 | 开关电容 | 4.4 V/2.2 V | 180 nm CMOS | 0.097 | 8.93 | 75 | | Nghia等[20] | 450.0 | 开关电容 | 1.2 V/0.6 V | 65 nm CMOS | 0.730 | 0.65 | 78 |
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