| Mechanics & Mechanical Engineering |
|
|
|
|
| Electrical and magnetic properties of ZnNiO thin films deposited by pulse laser deposition |
| Jie Jiang, Xue-tao Wang, Li-ping Zhu, Li-qiang Zhang, Zhi-guo Yang, Zhi-zhen Ye |
| State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China |
|
|
|
Abstract ZnNiO thin films with different contents of Ni (0–10 at.%) were fabricated on quartz and Si (100) substrates by pulsed laser deposition (PLD). We measured the samples by X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectrometer (UV-VIS), and Hall testing. When the Ni contents were below 3 at.%, partial Zn2+ ions were replaced by the Ni2+ ions without forming any other phases, which enhanced the conductivity of the film. When the Ni contents were above 3 at.%, Ni ions were at the interstitial sites, and Ni-related clusters and defects were able to emerge in the films, resulting in a worsening of electrical and optical properties. A ferromagnetic hysteresis with a coercive force of approximately 30 Oe was observed in the ZnNiO film with a Ni content of 3 at.% at room temperature.
|
|
Received: 31 December 2010
Published: 04 July 2011
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
| |
Shared |
|
|
|
|
| |
Discussed |
|
|
|
|
