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Journal of Zhejiang University-SCIENCE A (Applied Physics & Engineering)  2009, Vol. 10 Issue (3): 464-470    DOI: 10.1631/jzus.A0820572
Energy and Chemical Engineering     
Preparation of AlN thin films for film bulk acoustic resonator application by radio frequency sputtering
Kan LI, Hao JIN, De-miao WANG, Yi-fei TANG
Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
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Abstract  Aluminum nitride (AlN) thin films with high c-axis orientation have been prepared on a glass substrate with an Al bottom electrode by radio frequency (RF) reactive magnetron sputtering. Based on the analysis of Berg’s hysteresis model, the improved sputtering system is realized without a hysteresis effect. A new control method for rapidly depositing highly c-axis oriented AlN thin films is proposed. The N2 concentration could be controlled by observing the changes in cathode voltage, to realize the optimum processing condition where the target could be fixed stably in the transition region, and both stoichiometric film composition and a high deposition rate could be obtained. Under a 500 W RF power of a target with a 6 cm diameter, a substrate temperature of 450 °C, a target-substrate distance of 60 mm and a N2 concentration of 25%, AlN thin film with preferential (002) orientation was deposited at 2.3 μm/h which is a much higher rate than previously achieved. Through X-ray diffraction (XRD) analysis, the full width at half maximum (FWHM) of AlN (002) was shown to be about 0.28°, which shows the good crystallinity and crystal orientation of AlN thin film. With other parameters held constant, any increase or decrease in N2 concentration results in an increase in the FWHM of AlN.

Key wordsAluminum nitride (AlN)      Piezoelectric thin film      Radio frequency (RF) reactive sputtering      Preferred orientation      Film bulk acoustic resonator (FBAR)     
Received: 29 July 2008     
CLC:  O484  
Cite this article:

Kan LI, Hao JIN, De-miao WANG, Yi-fei TANG. Preparation of AlN thin films for film bulk acoustic resonator application by radio frequency sputtering. Journal of Zhejiang University-SCIENCE A (Applied Physics & Engineering), 2009, 10(3): 464-470.

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http://www.zjujournals.com/xueshu/zjus-a/10.1631/jzus.A0820572     OR     http://www.zjujournals.com/xueshu/zjus-a/Y2009/V10/I3/464

[1] Hong-sheng ZHAO, Lei CHEN, Nian-zi GAO, Kai-hong ZHANG, Zi-qiang LI. Low temperature sintering and performance of aluminum nitride/borosilicate glass[J]. Journal of Zhejiang University-SCIENCE A (Applied Physics & Engineering), 2009, 10(1): 109-113.