Abstract:The resonant tunneling diode (RTD) as a relatively mature quantum device, has a unique characteristic of negative differential resistance. Naturally, the monostable-bistable transition logic element (MOBILE) composed of RTDs can make good use of this characteristic for digital circuit design. This paper presents a new RTD control-output method with MOBILE. The advantage of this method is that the forward and reverse current voltage characteristics of RTD are combined, therefore, the three-terminal devices with large area could be avoided and the circuit design becomes convenient. With the RTD control-output method and a HEMT device, a novel D-latch was designed. The D-latch has a high level of bias voltage, which not only enables the high-level trigger mode of the MOBILE, but also possesses the characteristic of self-locking. The HSPICE simulation and analysis show that the D-latch has low-power consumption and fast-working speed, meanwhile it has a very simple circuit structure.
[1] YANG L A, LI Y, WANG Y, et al. Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes[J].Journal of Applied Physics, 2016, 119(16):164501.
[2] LIN Y C, GHOSH R K, ADDOU R, et al. Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures[J].Nature Communications, 2015, 6(33):1-10.
[3] PFENNING A, HARTMANN F, DIAS M R S, et al. Photocurrent-voltage relation of resonant tunneling diode photodetectors[J].Applied Physics Letters, 2015, 107(8):081004.
[4] THIESSEN T, POPP M, ZORN C, et al. Generalization of the jump postulate and Brayton-Moser's mixed potential for the analysis of RTD circuits[J].International Journal of Circuit Theory and Applications, 2016, 44(1):185-196.
[5] GAN K J, TSAI C S. Design of monostable-bistable transition logic element using the BiCMOS-based negative differential resistance circuit[J]. Analog Integrated Circuits and Signal Processing, 2011, 68(3):379-385.
[6] BAI F, LI L. An empirical I-V model of tunneling real-space transfer transistors for monostable-bistable transition logic element application[J].International Journal of Numerical Modelling Electronic Networks Devices & Fields, 2016, 29(1):77-82.
[7] SANO K, MURATA K, MATSUZAKI H. SCFL-Compatible 40-Gbit/s RTD/HEMT selector circuit[J].Ieice Transactions on Electronics, 2000, E83C(10):1690-1692.
[8] CHOI S, LEE J, JEONG Y, et al. A low DC-power multiplexer IC using an InP-Based CML-MOBILE RTD/HBT technology[C]//International Conference on Indium Phosphide & Related Materials. Versailles:IEEE, 2008:1-3.
[9] 林弥, 张海鹏, 吕伟锋,等. 基于RT器件的数据选择器和D锁存器设计[J]. 科技通报, 2009, 25(1):89-92. LIN M, ZHANG H P, LYU W F, et al. Design of data selector and D-latch based on RT device[J].Bulletin of Science and Technology, 2009, 25(1):89-92.
[10] SCHULMAN J N, SANTOS H J D L, CHOW D H. Physics-based RTD current-voltage equation[J].IEEE Electron Device Letters, 1996, 17(5):220-222.
[11] YAO M Q, YANG K, XU C Y, et al. Design of a novel RTD-based three-variable universal logic gate[J].Frontiers of Information Technology & Electronic Engineering, 2015, 16(8):694-699.
[12] 林弥. 基于共振隧穿器件RTD的二值和三值电路研究与设计[D]. 杭州:浙江大学, 2010. LIN M.Research and Design of Binary and Three-Valued Circuits Based on Resonant Tunneling Device RTD[D]. Hangzhou:Zhejiang University, 2010.
[13] CHO J, LI Z, BOZORG G E, et al. Improved thermal interfaces of GaN-diamond composite substrates for HEMT applications[J]. IEEE Transactions on Components Packaging & Manufacturing Technology, 2013, 3(3):79-85.
[14] STATNIKOV K, GRZYB J, HEINEMANN B, et al. 160-GHz to 1-THz multi-color active imaging with a Lens-coupled SiGe HBT Chip-set[J].IEEE Transactions on Microwave Theory & Techniques, 2015, 63(2):520-532.
[15] SIMIN G S, ISLAM M, GAEVSKI M, et al. Low RC-constant perforated-channel HFET[J].IEEE Electron Device Letters, 2014, 35(4):449-451.
[16] QUINTANA J M, AVEDILLO M J, NUNEZ J, et al. Operation limits for RTD-based MOBILE circuits[J].IEEE Transactions on Circuits & Systems Part I Regular Papers, 2009, 56(2):350-363.
[17] AVEDILLO M J, QUINTANA J M, ROLDAN H P. Increased logic functionality of clocked series-connected RTDS[J].IEEE Transactions on Nanotechnology, 2006, 5(5):606-611.