Abstract：The resonant tunneling diode (RTD) as a new quantum device and nano-electronic device, has many attributes, including negative resistance, low power consumption, high frequency, bistability and self-latching. It can be used to break through the physical limits of CMOS process size, and also has a broader space for the development of digital integrated circuit. According to the characteristics of the RTD, a D flip-flop is designed based on RTD and HEMT(high electron mobility transistor). The D flip-flop uses the monostable-bistable transition logic element (MOBILE) with three RTDs in series and the similar SR-latch. Compared with the D flip-flop in other studies, the designed D flip-flop can effectively reduce the device number and complexity of the circuit.What is more, it also can eliminate the interference of delay difference between the signals of S and R with a more robust output.
冯杰, 姚茂群. 基于RTD和HEMT的D触发器设计[J]. 浙江大学学报（理学版）, 2017, 44(6): 718-723.
FENG Jie, YAO Maoqun. Design of D flip-flop based on RTD and HEMT. Journal of ZheJIang University(Science Edition), 2017, 44(6): 718-723.
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