Abstract：The relationship between diffusion depth of K in the C60 single crystal and diffusion time was researched through the electrical resistivity measurements．Diffusion coefficient of about 10-15m2s-1 was deduced．Diffusion time for the preparation of 0.1mm and 1.0mm thickness K3C60 single crystal was calculated to be about 1452 hours and 16 years respectively．In order to prevent the specimen from formating K6C60，the calculated flux of K in the K3C60 single crystal demonstrated that the vapour pressure of K around the specimen should be no more than 1×10-16 Torr in the initial period of diffusion．Based on these works，some inconsistent results in the literatures were successfully explained．
李宏年，徐波，徐亚伯，何丕模，鲍世宁. K在C60单晶中的扩散通量研究[J]. 浙江大学学报（理学版）, 1999, 26(2): 33-37.
LI Hong-nian，XU Bo，XU Ya-bo，et al . Study on the Diffusion Flux of K in C60 Single Crystal. Journal of ZheJIang University(Science Edition), 1999, 26(2): 33-37.