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中低压碳化硅材料、器件及其在电动汽车充电设备中的应用示范 |
盛况1, 郭清1, 于坤山2, 丁晓伟3 |
1. 浙江大学 电气工程学院, 浙江 杭州 310027; 2. 北京国联万众半导体科技有限公司, 北京 101300; 3. 北京华商三优新能源科技有限公司, 北京 101106 |
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Medium and low voltage SiC materials, power devices and demonstration in electric vehicle charging equipment |
SHENG Kuang1, GUO Qing1, YU Kunshan2, DING Xiaowei3 |
1. College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China; 2. Beijing Advanced Semiconductor Innovation Co. Ltd., Beijing 101300, China; 3. Beijing Huashang Sanyou New Energy Technology Co. Ltd., Beijing 101106, China |
引用本文:
盛况, 郭清, 于坤山, 丁晓伟. 中低压碳化硅材料、器件及其在电动汽车充电设备中的应用示范[J]. 浙江大学学报(理学版), 2016, 43(6): 631-634.
SHENG Kuang, GUO Qing, YU Kunshan, DING Xiaowei. Medium and low voltage SiC materials, power devices and demonstration in electric vehicle charging equipment. Journal of Zhejiang University (Science Edition), 2016, 43(6): 631-634.
链接本文:
https://www.zjujournals.com/sci/CN/10.3785/j.issn.1008-9497.2016.06.001
或
https://www.zjujournals.com/sci/CN/Y2016/V43/I6/631
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[1] WANG G Y, HUANG A Q, WANG F, et al. Static and dynamic performance characterization and comparison of 15 kV SiC MOSFET and 15 kV SiC n-IGBTs[C]//IEEE 27th International Symposium on Power Semiconductor Devices & Ic's. Hongkong:IEEE,2015:229-232. [2] PALMOUR J W, CHENG L, PALA V, et al. Silicon carbide power MOSFETs:Breakthrough performance from 900 V up to 15 kV[C]//IEEE 26th International Symposium on Power Semiconductor Devices & IC's. Hawaii:IEEE,2014:79-82. [3] SONG X Q, HUANG A Q, LEE M C, et al. 22 kV SiC Emitter turn-off(ETO) thyristor and its dynamic performance including SOA[C]//IEEE 27th International Symposium on Power Semiconductor Devices & IC's. Hongkong:IEEE, 2015:277-280. [4] VAN BRUNT E, CHENG L, O'LOUGHLIN M J, et al. 27 kV, 20 A 4H-SiC n-IGBTs[J]. Materials Science Forum, 2015,821/822/823:847-850. [5] NIWA H, FENG G, SUDA J, et al. Breakdown characteristics of 12-20 kV-class 4H-SiC PiN diodes with improved junction termination structures[C]//IEEE 24th International Symposium on Power Semiconductor Devices and IC's. Bruges:IEEE,2012:381-384. [6] HUANG Runhua, TAO Yonghong, CAO Pengfei, et al. Development of 10 kV 4H-SiC JBS diode with FGR termination[J]. Journal of Semiconductors, 2014,35(7):074005. [7] XIAO Q, YAN Y, WU X, et al. A 10kV/200A SiC MOSFET module with series-parallel hybrid connection of 1200V/50A dies[C]//IEEE 27th International Symposium on Power Semiconductor Devices & Ic's. Hongkong:IEEE,2015:349-352. [8] HUANG R, TAO Y, SONG B, et al. Design and fabrication of a 3.3 kV 4H-SiC MOSFET[J]. Journal of Semiconductors, 2015,36(9):54-57. |
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