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浙江大学学报(工学版)
J4  2013, Vol. 47 Issue (1): 77-82    DOI: 10.3785/j.issn.1008-973X.2013.01.011
计算机技术﹑电信技术     
新器件结构SGOI低场迁移率模型及数值分析
李斌1,3, 陈安生2, 刘红侠3,温才1,魏岚1, 唐金龙1
1. 西南科技大学 理学院,四川 绵阳 621010； 2. 山西新华化工有限责任公司,山西 太原 030008；
3.西安电子科技大学 微电子学院,陕西 西安 710071
Low field mobility model and numerical analysis of new structure SGOI
LI Bin1,3,CHEN An-sheng2, LIU Hong-xia3, WEN Cai1, WEI Lan1,TANG Jin-long1
1. School of Physics, Southwest University of Science and Technology,Mianyang 621010,China;
2. Shanxi Xinhua Chemical Limited Company, Taiyuan 030008, China;
3. School of Microelectronics, XiDian University, Xi′an 710071, China
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摘要：

为了减小绝缘层上硅锗(SGOI)自加热和短沟道效应,提出新型的双台阶式埋氧SGOI n型金属氧化物半导体场效应晶体管(nMOSFET).在该器件结构中,采用双台阶式埋氧结构来减小自加热效应,引入接地层(GP)用于减小漏致势垒降低(DIBL).建立应变硅器件的低场迁移率模型并嵌入到器件模拟器Sentaurus Device中.在不同的沟道应变情况下,分析自加热效应随埋氧层的厚度以及短沟道效应随栅长的变化关系.模拟结果表明,相对于Ge组分为0的情况下,Ge组分为04的SGOI器件的输出电流提升了至少50%.随着沟道下方埋氧厚度从100 nm减小到10 nm,自加热温度减小超过60 ℃；当引入接地层后,DIBL效应减小超过25%,泄漏电流在很大程度上得到抑制．
Abstract:

A novel device called double step buried oxide (BOX) SGOI ntype metaloxidesemiconductor fieldeffect transistor (nMOSFET) was presented in order to eliminate the selfheating and short channel effect of strained Si grown on relaxed SiGeoninsulator (SGOI). In this structure, a double step buried oxide was constructed below the channel region for minishing selfheating effect. Meanwhile, a ground plane (GP) was introduced below channel buried layer for reducing drain induced barrier lowering (DIBL) effect. A low field mobility model for strained Si device was established and implemented in the device simulator Sentaurus Device. In different cases of channel strain, both selfheating effect as a function of buried oxide thickness and short channel effect as a function of gate length were analyzed. Numerical simulation results indicate that output current of the device with Ge content of 04 increases by more than 50 percent compared with that of the device without Ge content. As buried oxide thickness below the channel region ranges from 100 to 10 nm, the self-heating temperature decreases by over 60 ℃. DIBL effect decreases by more than 25 percent and leakage current is  greatly suppressed when a ground plane is involved.
出版日期: 2013-01-01
:  O 472  
作者简介: 李斌(1980-)，男，讲师，从事应变硅器件建模及可靠性研究. E-mail: bin_lichina@foxmail.com
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引用本文:

李斌, 陈安生, 刘红侠, 温才, 魏岚, 唐金龙. 新器件结构SGOI低场迁移率模型及数值分析[J]. J4, 2013, 47(1): 77-82.

LI Bin,CHEN An-sheng, LIU Hong-xia, WEN Cai, WEI Lan,TANG Jin-long. Low field mobility model and numerical analysis of new structure SGOI. J4, 2013, 47(1): 77-82.

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http://www.zjujournals.com/eng/CN/10.3785/j.issn.1008-973X.2013.01.011    或    http://www.zjujournals.com/eng/CN/Y2013/V47/I1/77

［1］吴贵斌, 叶志镇, 赵星, 等. 超高真空CVD选择性外延锗硅及其电学特性［J］. 浙江大学学报：工学版, 2006, 40(12): 20412043．
WU Gui-bin, YE Zhi-zhen, ZHAO Xing, et al. Electrical characteristic and selective growth of SiGe by ultrahigh vacuum chemical vapor deposition ［J］. Journal of Zhejiang University: Engineering Science, 2006, 40(12): 2041-2043．
［2］ MIZUNO T, TAKAGI S, SUGIYAMA N, et al. Electron and hole mobility enhancement in strained-Si MOSFET’s on SiGeoninsulator substrates fabricated by SIMOX technology ［J］. IEEE Electron Device Letter, 2000, 21 (5): 230-232．
［3］ LIU W, ASHEGHI M. Thermal modeling of self-heating in strained silicon MOSFETs ［C］∥Proceeding of IEEE ITHERM Conference. ［S. l.］: IEEE, 2004: 605.
［4］ 梁俊华, 郭冰, 刘旭. 利用同质缓冲层溅射生长c轴择优取向氮化铝薄膜 ［J］. 浙江大学学报：工学版, 2007, 41(9): 1512-1515．
LIAN Junhua, GUO Bing, LIU Xu. Sputtering growth of preferential c-axis-oriented aluminum nitride film using homogeneous buffer layer ［J］. Journal of Zhejiang University: Engineering Science, 2007, 41(9): 1512-1515．
［5］ BRESSON N, CRISTOLOVEANU S, MAZURE C, et al. Integration of buried insulators with high thermal conductivity in SOI MOSFETs: thermal properties and short channel effects ［J］. Solid-State Electronics, 2005, 49(9): 1522-1528.
［6］ KUMAR M J, SIVA M. The ground plane in buried oxide for controlling short-channel effects in nano scale SOI MOSFETs ［J］. IEEE Transactions on Electron Devices, 2008, 55(6): 1554-1557.
［7］ XIONG W, RAMKUMAR K, JANG S J, et al. Self-aligned ground-plane FD SOI MOSFET ［C］∥ Proceeding of IEEE International SOI Conference. ［S. l.］: IEEE, 2002: 23-24．
［8］ YANAGI S, NAKAKUBO A, OMURA Y. Proposal of partialgroundplane (PGP) silicon-on-insulator (SOI) MOSFET for deep sub0-1μm channel regime ［J］. IEEE Electron Device, 2001, 22(6): 278-280．
［9］ VIVEK V, NAWAL S, KUMAR M J. Compact analytical thresholdvoltage model of nanoscale fully depleted strained-Si on silicon germaniumon insulator (SGOI) MOSFETs ［J］.IEEE Transactions on Electron Devices, 2007, 54(3): 554-562．
［10］MASETTI G, SEVERI M, SOLMI S. Modeling of carrier mobility against carrier concentration in Arsenic, Phosphorus, and Boron-doped silicon ［J］. IEEE Transactions on Electron Devices, 1983, 30(7): 764-769．
［11］ LOMBARDI C, MANZINI S, SAPORTO A, et al. Physically based mobility model for numerical simulation of nonplanar devices ［J］. IEEE Transactions on Computer-Aided Design, 1988, 7(11): 1164-1171．
［12］李斌, 刘红侠, 袁博, 等. 应变Si/Si1-xGex n型金属氧化物半导体场效应晶体管反型层中的电子迁移率模型 ［J］. 物理学报, 2011, 60(1): 017202-01-017202-05．
LI Bin, LIU Hong-xia, YUAN Bo, et al. Model of electron mobility in inverison layer of strained Si/Si1-xGex n type metal-oxidesemiconductor field-effect transistors ［J］. Acta Physica Sinica, 2011, 60(1): 017202-01-017202-05．
［13］ TEZUKA T, NAKAHARAI S, MORIYAMA Y, et al. Hole-mobility enhancement in Ge-rich strained SiGe-on-Insulator pMOSFETs at high temperature ［J］. IEEE Transactions on Electron Devices, 2007, 54(5): 1247-1249．
［14］ ZHU M, CHEN P, FU R K. Numerical study of self-heating effects of MOSFETs fabricated on SOAN substrate ［J］. IEEE Transactions on Electron Devices, 2004, 51(6): 901-905．
［15］ CALLEN H B.Thermodynamics and an introduction to thermostatistics ［M］.New York: Wiley, 1985: 107.
［16］ 徐世六,谢孟贤,张正璠. SiGe微电子技术［M］.北京: 国防工业出版社, 2007:75.
［17］ Synopsys corporation. Sentaurus device ［CP/DK］.CA: Synopsys Corporation, c2008．
［18］ YAZDANI K E, YANG Y Z, ASHEGHI M, et al. Ballistic phonon transport and self-heating effects in strained-silicon transistors ［J］. IEEE Transactions on Components and Packaging Technology, 2006, 29(2): 254-260．
［19］ CURRIE M T, LEITZ, LANGDO T A, et al. Carrier mobilities and process stability of strained Si n-and p-MOSFETs on SiGe virtual substrates ［J］. Journal of Vacuum Science and Technology B, 2001, 19(6): 2268-2279.
［20］ JOACHIM H O, YAMAGUCHI Y, ISHIKAWA K, et al. Simulation and two-dimensional analytical modeling of subthreshold slope in ultrathin-film SOI MOSFET’s down to 0.1 um gate length ［J］. IEEE Transactions on Electron Devices, 1993, 40(10) : 1812-1817．
［21］ FIEGNA C, YANG Y, SANGIORGI E, et al. Analysis of self-heating effects in ultrathin-body SOI MOSFETs by device simulation ［J］.IEEE Transactions on Electron Devices, 2008, 55(1): 233-244．
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